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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4542 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed APPLICATIONS *Horizontal deflection output for high resolution display. *High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current- Continuous w w scs .i w 1500 V 600 V 5 V 10 A 20 A 5 A 50 W .cn mi e ICM Collector Current- Peak IB B Base Current Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4542 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.7A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.7A B 1.5 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; I IB= 0 600 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product COB Output Capacitance Switching Times tstg Storage Time w w. w .cn mi cse is IC= 1A ; VCE= 5V 8 IC= 0.1A ; VCE= 10V 1 IE= 0 ; VCB= 10V;ftest= 1.0MHz ICP= 7A , IB1= 1.4A; IB2= -2.8A; RL= 28.5 VEB= 5V ; IC= 0 10 A 3 MHz 210 pF 1.8 2.5 s tf Fall Time 0.1 0.2 s isc Websitewww.iscsemi.cn 2 |
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